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strong ir fet? IRFB7734PBF irfs7734pbf irfsl7734pbf 1 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 hexfet ? power mosfet d s g application ? ? brushed motor drive applications ? ? bldc motor drive applications ?? battery powered circuits ? ? half-bridge and full-bridge topologies ? ? synchronous rectifier applications ? ? resonant mode power supplies ? ? or-ing and redundant power switches ? ? dc/dc and ac/dc converters ? ? dc/ac inverters benefits ? ? improved gate, avalanche and dynamic dv/dt ruggedness ? ? fully characterized capacitance and avalanche soa ? ? enhanced body diode dv/dt and di/dt capability ? ? lead-free, rohs compliant v dss 75v r ds(on) typ. 2.8m ?? max 3.5m ?? i d 183a ? fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature to-220ab IRFB7734PBF d2pak irfs7734pbf to-262 irfsl7734pbf s d g s d g s d g d g d s gate drain source base part number package type standard pack orderable part number form quantity IRFB7734PBF to-220 tube 50 IRFB7734PBF irfsl7734pbf to-262 tube 50 irfsl7734pbf irfs7734pbf d2-pak tube 50 irfs7734pbf tape and reel left 800 irfs7734trlpbf 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 2 4 6 8 10 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 100a t j = 25c t j = 125c 25 50 75 100 125 150 175 t c , case temperature (c) 0 40 80 120 160 200 i d , d r a i n c u r r e n t ( a )
? irfb/s/sl7734pbf 2 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 absolute maximum rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 183 a i d @ t c = 100c continuous drain current, v gs @ 10v 130 ? i dm pulsed drain current ?? 650 ? p d @t c = 25c maximum power dissipation 290 w linear derating factor 2.0 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) ? avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 350 units e as (thermally limited) single pulse avalanche energy ?? 670 i ar avalanche current ? see fig 15, 16, 23a, 23b a e ar repetitive avalanche energy ? mj thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? ??? 0.51 c/w ? r ? cs case-to-sink, flat greased surface (to-220) 0.50 ??? r ? ja junction-to-ambient (to-220) ? ??? 62 r ? ja junction-to-ambient (pcb mount) (d 2 pak) ? ??? 40 symbol parameter max. mj ? static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 75 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 50 ??? mv/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 2.8 3.5 m ?? v gs = 10v, i d = 100a ? v gs(th) gate threshold voltage 2.1 ??? 3.7 v v ds = v gs , i d = 250a i dss drain-to-source leakage current ??? ??? 1.0 a v ds =75 v, v gs = 0v ??? ??? 150 v ds =75v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g gate resistance ??? 2.0 ??? ?? ??? 3.5 ??? ? v gs = 6.0v, i d = 50a ? notes: ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 70h, r g = 50 ? , i as = 100a, v gs =10v. ?? i sd ? 100a, di/dt ? 950a/s, v dd ? v (br)dss , t j ?? 175c. ?? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 37a, v gs =10v. ?? when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994 : http://www.irf.com/technical-info/appnotes/an-994.pdf
? irfb/s/sl7734pbf 3 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 250 ??? ??? s v ds = 10v, i d =100a q g total gate charge ??? 180 270 i d = 100a q gs gate-to-source charge ??? 45 ??? v ds = 38v q gd gate-to-drain charge ??? 55 ??? v gs = 10v q sync total gate charge sync. (qg ? qgd) ??? 125 ??? t d(on) turn-on delay time ??? 20 ??? ns v dd = 38v t r rise time ??? 123 ??? i d = 100a t d(off) turn-off delay time ??? 124 ??? r g = 2.7 ?? t f fall time ??? 100 ??? v gs = 10v ? c iss input capacitance ??? 10150 ??? pf ? v gs = 0v c oss output capacitance ??? 816 ??? v ds = 25v c rss reverse transfer capacitance ??? 500 ??? ? = 1.0mhz c oss eff.(er) effective output capacitance (energy related) ??? 707 ??? v gs = 0v, vds = 0v to 60v ? c oss eff.(tr) output capacitance (time related) ??? 916 ??? v gs = 0v, vds = 0v to 60v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 183 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 650 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c,i s = 100a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ? ??? 5.1 ??? v/ns t j = 175c,i s =100a,v ds = 64v ? t rr reverse recovery time ??? 47 ??? ns t j = 25c v dd = 64v ??? 51 ??? t j = 125c i f = 100a, q rr reverse recovery charge ??? 76 ??? nc t j = 25c di/dt = 100a/s ??? ??? 96 ??? t j = 125c ? i rrm reverse recovery current ??? 2.8 ??? a t j = 25c ? nc ? d s g
? irfb/s/sl7734pbf 4 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 0 50 100 150 200 250 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 60v v ds = 38v v ds = 15v i d = 100a fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 7. typical capacitance vs. drain-to-source voltage fig 8. typical gate charge vs. gate-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v ? 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 2.0 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.4 0.8 1.2 1.6 2.0 2.4 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 100a v gs = 10v
? irfb/s/sl7734pbf 5 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 fig 10. maximum safe operating area -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 75 80 85 90 95 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma 0 20 40 60 80 100 120 140 160 180 200 i d , drain current (a) 2.8 3.0 3.2 3.4 3.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 5.5v vgs = 6.0v vgs = 7.0v vgs = 8.0v vgs = 10v fig 11. drain-to-source breakdown voltage fig 13. typical on-resista nce vs. drain current fig 9. typical source-drain diode forward voltage -10 0 10 20 30 40 50 60 70 80 v ds, drain-to-source voltage (v) 0.0 0.5 1.0 1.5 2.0 e n e r g y ( j ) fig 12. typical c oss stored energy 0.0 0.4 0.8 1.2 1.6 2.0 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0.1 1 10 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc
? irfb/s/sl7734pbf 6 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart = 25c (single pulse) fig 14. maximum effective transient thermal impedance, junction-to-case fig 16. maximum avalanche energy vs. temperature 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 100a fig 15. avalanche current vs. pulse width notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 13) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ??
? irfb/s/sl7734pbf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150a i d = 250a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/s) 0 5 10 15 20 i r r m ( a ) i f = 100a v r = 64v t j = 25c t j = 125c fig 17. threshold voltage vs. temperature 0 200 400 600 800 1000 di f /dt (a/s) 0 100 200 300 400 q r r ( n c ) i f = 100a v r = 64v t j = 25c t j = 125c fig 21. typical stored charge vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 5 10 15 20 i r r m ( a ) i f = 60a v r = 64v t j = 25c t j = 125c fig 18. typical recovery current vs. dif/dt fig 20. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 100 200 300 400 q r r ( n c ) i f = 60a v r = 64v t j = 25c t j = 125c
? irfb/s/sl7734pbf 8 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ?
? irfb/s/sl7734pbf 9 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 to-220ab package outline (dimensions are shown in millimeters (inches)) to-220ab part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ in t e r n a t io n a l part number r e c t if ie r lo t c o d e assem bly lo g o year 0 = 2000 date code w eek 19 lin e c lot code 1789 e x a m p l e : t h is is a n ir f 1 0 1 0 n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead - free" in th e assem bly lin e "c " assem bled o n w w 19, 2000 to-220ab packages are not recommended for surface mount application .
? irfb/s/sl7734pbf 10 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 to-262 package outline (dimensions are shown in millimeters (inches) to-262 part marking information logo rectifier international lot code assembly logo recti fier international date code week 1 9 year 7 = 1997 part number a = assembly site code or product (optional) p = designates lead-free example: this is an irl3103l lot code 1789 assembly part number date code week 19 line c lot code year 7 = 1997 assembled on ww 19, 1997 in the assembly line "c" note: for the most current drawing please refer to ir website at http://www.irf.com/package/
? irfb/s/sl7734pbf 11 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 d 2 pak (to-263ab) package outline (dimensions are shown in millimeters (inches)) d 2 pak (to-263ab) part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ date code year 0 = 2000 week 02 a = assembly site code rectifier international part number p = designates lead - free product (optional) f530s in the assembly line "l" assembled on ww 02, 2000 this is an irf530s with lot code 8024 international logo rectifier lot code assembly year 0 = 2000 part number date code line l week 02 or f530s logo assembly lot code
? irfb/s/sl7734pbf 12 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. d 2 pak (to-263ab) tape & reel information (dimensions are shown in millimeters (inches)) qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? moisture sensitivity level to-220 n/a rohs compliant yes d 2 pak msl1 to-262 n/a note: for the most current drawing please refer to ir website at http://www.irf.com/package/ ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comments 11/5/2014 ?? updated e as (l =1mh) = 670mj on page 2 ?? updated note 8 ?limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 37a, v gs =10v?. on page 2 ?? updated package outline on page 9,10,11.
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